IndiumV3, Chine, Analysis, bibRecord, 000935

Comparison between two types of photonic-crystal cavities for single-photon emitters

Identifieur interne : 000935 ( Chine/Analysis ); précédent : 000934; suivant : 000936

Comparison between two types of photonic-crystal cavities for single-photon emitters

Auteurs : RBID : Pascal:11-0306600

Descripteurs français

Pascal (Inist)
- Photoluminescence, Etude théorique, Méthode différence finie domaine temps, Cristal photonique, Point quantique, Semiconducteur III-V, Composé binaire, Indium Arséniure, Réseau hexagonal, GaAs, InAs, As Ga, As In, 4270Q, Photon unique.

English descriptors

KwdEn :
- Binary compounds, Finite difference time-domain analysis, Hexagonal lattices, III-V semiconductors, Indium Arsenides, Photoluminescence, Photonic crystals, Quantum dots, Single photon, Theoretical study.

Abstract

The properties of photonic-crystal (PhC) cavity modes are investigated for applications in single-photon emitters. Hexagonal-lattice PhC H1 and L3 cavities are fabricated in a GaAs slab containing InAs quantum dots. The cavity modes are characterized by polarization-dependent micro-photoluminescence measurements. Split and nearly degenerate dipole modes in H1 cavities are demonstrated in the same batch of samples, and a single L3 cavity mode with specific polarization is clearly observed. The results reveal that the L3 PhC cavity exhibits fairly excellent performance even with remarkable distortion and is favorable for single-photon emitters. Finite-difference time-domain simulations show that the verticality of the air-hole sidewall has a significant influence on the properties of PhC cavity modes.

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Pascal:11-0306600

Le document en format XML

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<author><name>WENJUAN FAN</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University</s1>
<s2>Beijing</s2>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
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<author><name>ZHIBIAO HAO</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University</s1>
<s2>Beijing</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
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</author>
<author><name sortKey="Stock, Erik" uniqKey="Stock E">Erik Stock</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Festkörperphysik, Technishe Universität Berlin</s1>
<s2>10623 Berlin</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
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<author><name>JIANBIN KANG</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University</s1>
<s2>Beijing</s2>
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<author><name>YI LUO</name>
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<author><name sortKey="Bimberg, Dieter" uniqKey="Bimberg D">Dieter Bimberg</name>
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<term>Point quantique</term>
<term>Semiconducteur III-V</term>
<term>Composé binaire</term>
<term>Indium Arséniure</term>
<term>Réseau hexagonal</term>
<term>GaAs</term>
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<front><div type="abstract" xml:lang="en">The properties of photonic-crystal (PhC) cavity modes are investigated for applications in single-photon emitters. Hexagonal-lattice PhC H1 and L3 cavities are fabricated in a GaAs slab containing InAs quantum dots. The cavity modes are characterized by polarization-dependent micro-photoluminescence measurements. Split and nearly degenerate dipole modes in H1 cavities are demonstrated in the same batch of samples, and a single L3 cavity mode with specific polarization is clearly observed. The results reveal that the L3 PhC cavity exhibits fairly excellent performance even with remarkable distortion and is favorable for single-photon emitters. Finite-difference time-domain simulations show that the verticality of the air-hole sidewall has a significant influence on the properties of PhC cavity modes.</div>
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<s5>75</s5>
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<s5>76</s5>
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<s5>91</s5>
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Comparison between two types of photonic-crystal cavities for single-photon emitters

Comparison between two types of photonic-crystal cavities for single-photon emitters

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri